Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
Identifieur interne : 00A674 ( Main/Repository ); précédent : 00A673; suivant : 00A675Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
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Abstract
The use of strain-compensated InGaAsSb/AlGaAsSb quantum wells for the fabrication of type I mid-infrared laser devices grown on GaSb substrates by molecular-beam epitaxy is reported. The creation of a tensile strain in the Al0.25Ga0.75AsySb1-y barriers by the incorporation of an arsenic fraction greater than 2% allows to reduce the average strain in the active region and increase the valence band offset to improve hole confinement in the wells. A 2.82 μm emission wavelength in pulsed mode along with a 660 A/cm2 threshold current density are obtained at room temperature for a type I InGaAsSb/AlGaAsSb double-quantum-well laser diode. By further increasing the indium and arsenic compositions into the wells and barriers, respectively, pulsed lasing at a wavelength of 2.89 μm at room temperature has also been achieved. © 2004 American Institute of Physics.
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Heroux</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Columbia University, New York, New York 10027</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical Engineering, Columbia University, New York</wicri:cityArea></affiliation></author><author><name sortKey="Shao, H" uniqKey="Shao H">H. Shao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Columbia University, New York, New York 10027</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical Engineering, Columbia University, New York</wicri:cityArea></affiliation></author><author><name sortKey="Wang, W I" uniqKey="Wang W">W. I. 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The creation of a tensile strain in the Al<sub>0.25</sub>Ga<sub>0.75</sub>As<sub>y</sub>Sb<sub>1-y</sub> barriers by the incorporation of an arsenic fraction greater than 2% allows to reduce the average strain in the active region and increase the valence band offset to improve hole confinement in the wells. A 2.82 μm emission wavelength in pulsed mode along with a 660 A/cm<sup>2</sup> threshold current density are obtained at room temperature for a type I InGaAsSb/AlGaAsSb double-quantum-well laser diode. By further increasing the indium and arsenic compositions into the wells and barriers, respectively, pulsed lasing at a wavelength of 2.89 μm at room temperature has also been achieved. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers</s1></fA08><fA11 i1="01" i2="1"><s1>LI (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>HEROUX (J. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHAO (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (W. I.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, Columbia University, New York, New York 10027</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2016-2018</s1></fA20><fA21><s1>2004-03-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0132781</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The use of strain-compensated InGaAsSb/AlGaAsSb quantum wells for the fabrication of type I mid-infrared laser devices grown on GaSb substrates by molecular-beam epitaxy is reported. The creation of a tensile strain in the Al<sub>0.25</sub>Ga<sub>0.75</sub>As<sub>y</sub>Sb<sub>1-y</sub> barriers by the incorporation of an arsenic fraction greater than 2% allows to reduce the average strain in the active region and increase the valence band offset to improve hole confinement in the wells. A 2.82 μm emission wavelength in pulsed mode along with a 660 A/cm<sup>2</sup> threshold current density are obtained at room temperature for a type I InGaAsSb/AlGaAsSb double-quantum-well laser diode. 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